Periods/week : 3 Periods & 1 Tut /week.                                                                  Ses. : 30 Exam : 70 Examination (Practical): 3hrs.                                                                                   Credits: 4

  1. I.             Semiconductors :
    Electronic   Emission   from   metal   carrier   concentration   in   an   intrinsic
    Semiconductors open  circuited PN junction – diffusion.

     

    II.            PN Junction Diode :
    PN Junction Diode, VI Characteristics of PN Junction Diode, capacitate effects in
    PN Junction Diode, Quantitative theory of PN Junction Diode.

     

    III.          Special Devices:
    Principles, Working of zero diode, Tunnel diode, Varactor diode, Schottky diode, SCR and UJT.

     

    IV.          Transistors:
    The  bipolar  junction  Transistor  –  Operation  of  PNP  and  NPN  Transistors  – Transistor  Circuit  configurations-  characteristics  of  a  CE  configurations  –  h parameter, low frequency small signal equivalent circuit of a Transistor.

     

    V.            Transistor Biasing and thermal stabilization:
    Transistor Biasing, stabilization, Different methods of transistor biasing – Fixed bias, Collector feedback bias – self bias – Bias compensation.

     

    VI.      Field Effect Transistors:
    Junction Field Effect Transistors (JFET) – JFET characteristics, JFET Parameters, Small equivalent circuit – MOSFETS – Depletion and Enhancement MOSFETS.

     

    VII.     Rectifying circuits:
    Half wave and full wave rectifiers – Bridge rectifiers – rectifier efficiency, Ripple and
    regulation – Shunt capacitor filter – Zener regulation.

     

    VIII.       Transistor Amplifiers:
    CE, CB, CC amplifier configurations – Analysis using h- parameters – Multistage amplifier – RC coupled amplifier – frequency response curve and bandwidth.

     

    TEXT BOOK:
    Electronic Device and Circuits by Sanjeev Gupth.

     

    REFERENCE:
    Integrated Electronics by Millman & Halkias.

tejus mahiCSE 2.1 SyllabusIT 2.1 SyllabusCSE,CSE Syllabus,Electronics Syllabus,IT Syllabus
Periods/week : 3 Periods & 1 Tut /week.                                                                  Ses. : 30 Exam : 70 Examination (Practical): 3hrs.                                                                                   Credits: 4 I.             Semiconductors : Electronic   Emission   from   metal   carrier   concentration   in   an   intrinsic Semiconductors open  circuited PN junction –...